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ADVANCES IN INDUSTRIAL ENGINEERING AND MANAGEMENT
ISSN:2222-7059 (Print);EISSN: 2222-7067 (Online)
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Title : Analytical Model of Surface Potential of Double Surrounding Gate MOSFET
Author(s) : Abhishek Chakraborty, Sourav Bairagya, Angsuman Sarkar
Author affiliation : ECE Department, Kalyani Government Engineering College, Kalyani, West Bengal, India
Corresponding author img Corresponding author at : Corresponding author img  

Abstract:
This paper presents an analytical model of surface potential of double surrounding gate MOSFET. The model has been developed using a flux-based approach. The variation of surface potentials for change in different device parameters has been provided.

Key words:Double surrounding gate MOSFET; surface potential; analytical model; flux-based approach; short-channel effects

Cite it:
Abhishek Chakraborty*, Sourav Bairagya, Angsuman Sarkar, Analytical Model of Surface Potential of Double Surrounding Gate MOSFET, Advances in Industrial Engineering and Management, vol. 5, no. 1, 2016, pp. 93-97, doi: 10.7508/aiem.2016.01.019

Full Text : PDF(size: 406.29 kB, pp. 93-97, Download times:136)

DOI : 10.7508/aiem.2016.01.019

References:

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