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ADVANCES IN INDUSTRIAL ENGINEERING AND MANAGEMENT
ISSN:2222-7059 (Print);EISSN: 2222-7067 (Online)
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Title : Analog/RF performance and Linearity Investigation of Si-based Double Gate Tunnel FET
Author(s) : Sudhansu Mohan Biswal, Biswajit Baral, Debashis De, Angsuman Sarkar
Author affiliation : ECE Department, Silicon Institute of Technology, Bhubaneswar, Odisha, India
West Bengal University of Technology, Kolkata, India
Kalyani Government Engineering College, Kolkata, India
Corresponding author img Corresponding author at : Corresponding author img  

Abstract:
In this paper, we present a simulation study to report the effect of gate-length downscaling on the analog/RF performance and Linearity investigation of Si-based DG Tunnel FET (TFET). The different RF/analog figure-of-merits such as gm, RO, intrinsic gain, fT, fmax and GBW and 1-dB Compression point considered as important linearity matrices of a TFET are extracted and the influence of gate-length downscaling on these parameters is analyzed. Results reveals that superior RF and Linearity performance was obtained with gate-length downscaling. However, these advantages diminishes in terms of poor analog performance with gate-length downscaling. This clearly indicates a trade-off between the analog and RF performance of a down-scaled Si-based TFET. This paper concludes that Si-based TFETs have enormous potential to be a promising contender to the conventional bulk MOSFETs for realization of future generation low-power analog/RF applications.

Key words:Tunnel FET; transconductance; transconductance generation factor; cut-off frequency; maximum frequency of oscillation; gain bandwidth product; TCAD; 1-dB compression point

Cite it:
Sudhansu Mohan Biswal, Biswajit Baral, Debashis De, Angsuman Sarkar, Analog/RF performance and Linearity Investigation of Si-based Double Gate Tunnel FET, Advances in Industrial Engineering and Management, vol. 5, no. 1, 2016, pp. 150-156, doi: 10.7508/aiem.2016.01.029

Full Text : PDF(size: 448.18 kB, pp. 150-156, Download times:242)

DOI : 10.7508/aiem.2016.01.029

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