: Avik Chakraborty, Angsuman Sarkar
: ECE Department, Bengal Institute of Technology and Management, Bolpur, India
ECE Department, Kalyani Government Engineering College, Kalyani, India
In this paper, a physics-based two-dimensional analytical surface potential model of asymmetric dual material double-gate MOSFET has been developed. The model details the role of various MOSFET parameters such as source/drain and body doping concentrations, the lengths of the gate metals and their work functions, applied drain and substrate biases, the thickness of the gate and buried oxide to influence the surface potential. From the developed expression of surface potential, expression of threshold voltage was derived. Using the analytical model, an investigation about the ability of gate-engineering technique to suppress considered as the most primitive short-channel effects (SCEs) such as the degradation of threshold voltage and Drain Induced Barrier Lowering (DIBL) has been provided.
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