In this paper the characteristics of 14 nm Underlap Double Gate (U-DG) NMOSFET with gate stack (GS) with different underlap length are studied. Underlap optimization is the key solution to minimize short channel effects, such as Gate Induced Drain Leakage (GIDL) and Drain Induced Barrier Lowering (DIBL).The underlap length has been optimized based on the on current to off current ratio (ION/IOFF). The RF performance comparison for the devices with 4 nm, 6 nm and 8 nm underlap length is shown in terms of the parameters such as total gate capacitance (Cgg), intrinsic capacitances (Cgs ,Cgd), intrinsic resistances(Rgs , Rgd), transport delay (τm), the unity current gain cut-off frequency (fT) and the maximum frequency of oscillation( fmax).
:This work was supported in part by the Department of Science and Technology, Govt. of India (SERB), Heritage Institute of Technology, Kolkata and the Council of Scientific and Industrial Research, Govt. of India (SB/S3/EECE/067/2014).
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