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ADVANCES IN INDUSTRIAL ENGINEERING AND MANAGEMENT
ISSN:2222-7059 (Print);EISSN: 2222-7067 (Online)
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Title : 2-D Analytical Modeling of Dual-Material Double Gate Silicon-On-Nothing MOSFET
Author(s) : Pritha Banerjee, Aman Mahajan, Subir Kumar Sarkar
Author affiliation : Department of Electronics &Telecommunication Engineering, Jadavpur University, Kolkata-700032, India
Corresponding author img Corresponding author at : Corresponding author img  

Abstract:
This paper presents a 2-D analytical model of Dual-Material Double Gate Silicon-On-Nothing (DMDG SON) MOSFET. In order to obtain the surface potential variation of the device, 2-D Poisson’s equation with proper boundary conditions is solved. Electric field and threshold voltage are calculated for the device and the various short channel effects like DIBL, threshold voltage roll-off, hot carrier effect are examined. The close agreement between the calculated and simulated values obtained from a 2-D device simulator namely ATLAS validate the proposed model.

Key words:Short channel effects; DIBL; threshold voltage roll-off; hot carrier effect; SOI/SON MOSFET

Cite it:
Pritha Banerjee, Aman Mahajan, Subir Kumar Sarkar, 2-D Analytical Modeling of Dual-Material Double Gate Silicon-On-Nothing MOSFET, Advances in Industrial Engineering and Management, vol. 6, no. 1, 2017, pp. 11-16, doi: 10.7508/aiem.2017.01.003

Full Text : PDF(size: 467.81 kB, 11-16, Download times:87)

DOI : 10.7508/aiem.2017.01.003

References:
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[9]ATLAS User’s Manual, SILVACO Int., Santa Clara, CA, USA, 2015.

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