: Pritha Banerjee, Aman Mahajan, Subir Kumar Sarkar
: Department of Electronics &Telecommunication Engineering, Jadavpur University,
This paper presents a 2-D analytical model of Dual-Material Double Gate Silicon-On-Nothing (DMDG SON) MOSFET. In order to obtain the surface potential variation of the device, 2-D Poisson’s equation with proper boundary conditions is solved. Electric field and threshold voltage are calculated for the device and the various short channel effects like DIBL, threshold voltage roll-off, hot carrier effect are examined. The close agreement between the calculated and simulated values obtained from a 2-D device simulator namely ATLAS validate the proposed model.
:Pritha Banerjee thankfully acknowledges the financial support obtained from University Grants commission vide file no.43-293/2014 (SR).
(size: 467.81 kB, 11-16
, Download times:
The International Technology Roadmap for Semiconductor, Emerging Research Devices, 2009.
FabioD’Agostino, Daniele Quercia, Introduction to VLSI design (EECS 467), Short-Channel Effects in MOSFETs, December 11th, 2000.
G. V. Reddy and M. J. Kumar, 2005. A new dual-material double-gate (DMDG) nanoscale SOI MOSFET—Two-dimensional analytical modeling and simulation, IEEE Trans. Electron Devices, vol. 4, no. 2, pp. 260-268.
S. K. Gupta, A. Baidya, and S. Baishya, 2012. Simulation and analysis of gate engineered triple metal double gate (TM-DG) MOSFET for diminished short channel effects, International Journal of Advanced Science and Technology, vol. 38.
K. K. Young, 1989. Short-channel effect in fully depleted SOI MOSFETs, IEEE Trans. on Electron Devices, vol. 36, no. 2, pp. 399 - 402.
T. K. Chiang and M. L. Chen, 2007. A new two-dimensional analytical model for short-channel symmetrical dual-material double-gate metal-oxide-semiconductor ﬁeld effect transistors,” Jpn. J. Appl. Phys., vol. 46, no. 6A, pp. 3283-3290.
S. Naskar and S. K. Sarkar, 2013. Quantum analytical model for inversion charge and threshold voltage of short-channel dual-material double-gate son mosfet, IEEE Trans. Electron Devices, vol. 60, no. 9, pp. 2734-2740.
B. Manna, S. Sarkhel, N. Islam, S. Sarkar, S. K. Sarkar, 2012. Spatial composition grading of binary metal alloy gate electrode for short-channel SOI/SON MOSFET application, IEEE Trans. on Electron Devices, vol. 59, no. 12, pp. 3280-3287.
ATLAS User’s Manual, SILVACO Int., Santa Clara, CA, USA, 2015.