: S. Swetha, MD. Afreen Begum
: Department of ECE, CVR College of Engineering, Ibrahimpatnam-501510, India
Optimization of area, delay and power dissipation is the major issue in low voltage and low power applications. GDI-Gate Diffusion Technology is low power digital combinational design. This technology requires less number of transistors compared to conventional CMOS technology. As the number of transistors reduced, then optimization of area and power is achieved. One of the disadvantages of GDI is poor logic swing, which is overcome by modifying this technique. This paper mainly presents the optimized area and low power 8-bit ALU using Modified Gate Diffusion Input Technique. This technique allows a reduction in area, delay and low power dissipation with full logic swing. Full adder is a basic cell in ALU which is designed using XOR-MUX to have an operation with high-speed and low power. The entire design is done using CADENCE Tool in GPDK 90nm and 45nm technology. Power and delay comparison between conventional CMOS, GDI and Modified GDI is also presented.
:We would like to thank management of CVR College of Engineering for providing CADENCE TOOL Laboratory.
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