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ADVANCES IN INDUSTRIAL ENGINEERING AND MANAGEMENT
ISSN:2222-7059 (Print);EISSN: 2222-7067 (Online)
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Title : Dependence of Peak Tunneling Current Density on Structural Parameters in Rectangular DQW Device
Author(s) : Shuvodseep Saha, Aparupa Chakrabarty, Arpan Deyasi
Author affiliation : RCC Institute of Information Technology, Kolkata, India 700015
Corresponding author img Corresponding author at : Corresponding author img  

Abstract:
Peak of tunneling current density of double quantum well device is analytically computed for different structural parameters, material composition and applied bias. Energy propagation is considered along the direction of applied bias, and travelling wave is measured w.r.t input wave at each grid point inside the structure. Rectangular well geometry is considered for ease of simulation. Effective mass mismatch at hetero-interfaces are taken into account by considering BenDaniel Duke boundary condition. High peak value at specific conditions will help to work the device for resonant tunneling application, precisely for the fabrication of RTD and RTT.

Key words:Tunnelling current density; peak current; structural parameters; double quantum well; applied bias

Cite it:
Shuvodseep Saha, Aparupa Chakrabarty, Arpan Deyasi, Dependence of Peak Tunneling Current Density on Structural Parameters in Rectangular DQW Device , Advances in Industrial Engineering and Management, vol. 6, no. 2, 2017, pp. 78-82, doi: 10.7508/aiem.2017.02.004

Full Text : PDF(size: 296.32 kB, 78-82, Download times:79)

DOI : 10.7508/aiem.2017.02.004

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