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ISSN:2222-7059 (Print);EISSN: 2222-7067 (Online)
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Title : Study of characteristic parameters for Channel and Gate Engineered Double Gate MOSFET considering Gaussian doping and Inner Fringing Capacitance
Author(s) : Akashdeep Mazumder, Saim Aktar, Anamika Kumari, Aaswas Ganguly, Swapnadip De*
Author affiliation : Department of Electronics & Communication Engineering, Meghnad Saha Institute of Technology, Nazirabad, Uchhepota, Kolkata-700150
Corresponding author img Corresponding author at : Corresponding author img  

An analytical expression of subthreshold Surface Potential, Drain Current and Threshold Voltage is formulated for Double Halo Dual Material Double Gate(DHDMDG) MOSFET taking into account Inner Fringing Capacitances at the Source and Drain end. The doping profile concentration considered for the halo regions at the source and the drain end is Gaussian in nature. The results of Ten from the proposed model are compared with those from the models of Channel Engineered conventional MOSFET structure. It is found that DHDMDG structure suppresses short channel effects more effectively as compared to conventional MOSFETs. Very good agreement of the proposed result obtained from the models of DHDMDG with those from DESSIS validates the model in suppressing short channel effects.

Key words:Gaussian Doping; Inner Fringing Capacitance; Channel Engineering; gate Engineering; Double Gate MOSFET

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DOI : 10.7508/aiem.2018.01.002

[1] Swapnadip De, Angsuman Sarkar, Chandan. K. Sarkar “Modelling of Characteristic Parameters for Asymmetric DHDMG Mosfet”, WSEAS Transactions on Circuits and Systems, Greece, volume 11, issue 11, November 2012, pp. 371-380 [2] Swapnadip De, Angsuman. Sarkar, Chandan. K. Sarkar “Modelling of parameters for asymmetric halo and symmetric DHDMG n-MOSFETs”, International Journal of Electronics, Taylor & Francis, UK, vol.98, no.10, October 2011, pp.1365-1381 [3] Aatrayee Das, Prachi Agarwal, Subhra Sarkar, Sudeshna Mukherjee, Manash Chanda, Swapnadip De “Modelling of Surface Potential and Drain Current for linearly doped short channel nMOSFET with Inner Fringing Field”, Advances in Industrial Engineering and Management (“AIEM”) published by American Scientific Publishers (ASP), USA, volume number 5, issue 1, page number 1-6. [4] Sudeshna Mukherjee, Subhra Sarkar, Prachi Agarwal, Aatrayee Das, Manash Chanda, Swapnadip De “Modelling of the basic parameters for Gaussian doped Symmetric Double Halo Dual Material Gate n-MOSFET ”, Advances in Industrial Engineering and Management (“AIEM”) published by American Scientific Publishers (ASP), USA, volume number 5, issue 1, page number 7-11. [5] Swapnadip De, Angsuman. Sarkar, C. K. Sarkar “Fringing Capacitance based surface potential model for pocket DMG n-MOSFETs”, Journal of Electron Devices, France, volume 12, 2012, pp. 704-712 [6] Debarati Das, Swapnadip De, Manash Chanda, C K Sarkar "Modelling of sub threshold surface potential for short channel Double gate Dual Material Double Halo MOSFET", The IUP Journal of Electrical & Electronics Engineering, ICFAI University Press, vol.7 issue no.4, pp. 19-42, October 2014

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