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ADVANCES IN INDUSTRIAL ENGINEERING AND MANAGEMENT
ISSN:2222-7059 (Print);EISSN: 2222-7067 (Online)
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Title : Modelling of the Basic Parameters for Gaussian doped Symmetric Double Halo Dual Material Gate n-MOSFET
Author(s) : Sudeshna Mukherjee, Subhra Sarkar, Prachi Agarwal, Aatrayee Das, Manash Chanda, Swapnadip De
Author affiliation : Department of ECE, Meghnad Saha Institute of Technology, Kolkata 700150, India
Corresponding author img Corresponding author at : Corresponding author img  

Abstract:
A model for sub threshold surface potential and threshold voltage for a Double halo Dual Material Gate (DHDMG) MOSFET is proposed in this paper. To model the sub threshold surface potential, a pseudo-2D analysis applying Gauss's law along the surface is used. This is also used to find the threshold voltage for Gaussian profile based DHDMG. Two Gaussian pile-up profiles are located at the source and drain ends of a MOSFET. The proposed model is derived on the basis of this and is further applied to find the surface potential using high-k gate dielectric materials. In order to verify the models, a 2D device simulator DESSIS is used and simulation results reveal that the model predicts the value of the sub threshold surface potential and threshold voltage almost accurately for the different devices and pocket parameters along with various bias voltages.

Key words:Gaussian doping; sub threshold surface potential; threshold voltage; double halo; gauss’s law

Cite it:
Sudeshna Mukherjee, Subhra Sarkar, Prachi Agarwal, Aatrayee Das, Manash Chanda, Swapnadip De, Modelling of the Basic Parameters for Gaussian doped Symmetric Double Halo Dual Material Gate n-MOSFET, Advances in Industrial Engineering and Management, vol. 5, no. 1, 2016, pp. 7-11, doi: 10.7508/aiem.2016.01.002

Full Text : PDF(size: 451.42 kB, pp. 7-11, Download times:147)

DOI : 10.7508/aiem.2016.01.002

References:

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